DSpace at KISTKIST Conference Paper2006

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dc.contributor.authorYang, J.S.-
dc.contributor.authorKim, S.-I.-
dc.contributor.authorPark, J.H.-
dc.contributor.authorCho, W.J.-
dc.contributor.authorKim, Y.T.-
dc.date.accessioned2024-01-12T07:55:27Z-
dc.date.available2024-01-12T07:55:27Z-
dc.date.created2022-03-01-
dc.date.issued2006-10-
dc.identifier.issn0000-0000-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/81547-
dc.description.abstractNonvolatile memory device was fabricated by using Nano-Crystal(NC)-Si particles. NC-Si particles had a wide size distribution of 1-5nm and an average size of 2.7nm, which were sufficiently small to indicate the quantum effect for silicon. The memory window was analyzed by C-V characteristic of NC-Si particles. Vd-Id, Vg-Id characteristics of the fabricated device were also measured.-
dc.languageEnglish-
dc.publisherIEEE-
dc.titleElectrical characteristics of nano-crystal Si particles for nano floating gate memory-
dc.typeConference-
dc.identifier.doi10.1109/NMDC.2006.4388936-
dc.description.journalClass1-
dc.identifier.bibliographicCitation2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, pp.628 - 629-
dc.citation.title2006 IEEE Nanotechnology Materials and Devices Conference, NMDC-
dc.citation.startPage628-
dc.citation.endPage629-
dc.citation.conferencePlaceUS-
dc.citation.conferencePlaceGyeongju-
dc.citation.conferenceDate2006-10-22-
dc.relation.isPartOf2006 IEEE Nanotechnology Materials and Devices Conference, NMDC-
dc.identifier.scopusid2-s2.0-50249094271-
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KIST Conference Paper > 2006
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