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dc.contributor.authorHan, Il Ki-
dc.contributor.authorChoi, Won Jun-
dc.date.accessioned2024-01-12T09:37:39Z-
dc.date.available2024-01-12T09:37:39Z-
dc.date.created2022-01-14-
dc.date.issued2002-01-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/83635-
dc.titleStudy on the light-current characteristics of 1.55 um InGaAsP/InP MQW-LD with highly p-doped InGaAsP/InP layer-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationSPIE, pp.527 - 532-
dc.citation.titleSPIE-
dc.citation.startPage527-
dc.citation.endPage532-
dc.relation.isPartOfProceedings of SPIE : Materials and Devices for Optical and Wireless Communications-
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KIST Conference Paper > 2002
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