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dc.contributor.authorSeol, K.S.-
dc.contributor.authorHiramatsu, H.-
dc.contributor.authorOhki, Y.-
dc.contributor.authorShin, D.-S.-
dc.contributor.authorChoi, I.-H.-
dc.contributor.authorKim, Y.-T.-
dc.date.accessioned2024-01-12T10:40:16Z-
dc.date.available2024-01-12T10:40:16Z-
dc.date.created2022-03-10-
dc.date.issued1999-11-
dc.identifier.issn0272-9172-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/84870-
dc.description.abstractUsing a KrF or ArF excimer laser as an irradiation photon source, we have succeeded in crystallizing amorphous SrBi2Ta2O9 films at 200-290°C, quite lower temperatures than the conventional crystallization temperature. The crystallization is enhanced when the substrate temperature, irradiation time, or the laser power density is higher.-
dc.languageEnglish-
dc.publisherMaterials Research Society-
dc.titleLow temperature crystallization of SrBi2Ta2O9 film by excimer laser irradiation-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitation1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998', pp.293 - 298-
dc.citation.title1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998'-
dc.citation.startPage293-
dc.citation.endPage298-
dc.citation.conferencePlaceUS-
dc.citation.conferencePlaceBoston, MA, USA-
dc.citation.conferenceDate1998-11-30-
dc.relation.isPartOfMaterials Research Society Symposium - Proceedings-
dc.identifier.scopusid2-s2.0-0032592328-
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