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dc.contributor.authorChoi, Won Jun-
dc.contributor.authorLee, Seok-
dc.date.accessioned2024-01-12T10:40:26Z-
dc.date.available2024-01-12T10:40:26Z-
dc.date.created2022-01-14-
dc.date.issued1999-11-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/84878-
dc.titleControl of the intermixing of InGaAs/InGaAsP quantum well in impurity free vacancy disordering by changing NH3 flow rate during the growth of SiNx cap-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitation미국, pp.515 - 518-
dc.citation.title미국-
dc.citation.startPage515-
dc.citation.endPage518-
dc.relation.isPartOfMarerials Research Society Symposium proceedings-MRS'99 fall meeting - 직접입력-
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