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dc.contributor.author김동준-
dc.contributor.author김용태-
dc.date.accessioned2024-01-12T11:03:17Z-
dc.date.available2024-01-12T11:03:17Z-
dc.date.issued2000-02-10-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/85154-
dc.title초고집적　기억소자　및　비기억소자를　위한WBxNy확산방지막　제조방법　및　 그를　이용한　다층금속연결　배선방법-
dc.typePatent-
dc.date.registration2000-02-10-
dc.date.application1997-11-04-
dc.identifier.patentRegistrationNumber255130-
dc.identifier.patentApplicationNumber97-57885-
dc.publisher.countryKO-
dc.type.iprs특허-
dc.contributor.assignee한국과학기술연구원-
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