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dc.contributor.authorHahn, C.K.-
dc.contributor.authorPark, Y.J.-
dc.contributor.authorPark, K.H.-
dc.contributor.authorHyun, C.K.-
dc.contributor.authorKim, E.K.-
dc.contributor.authorMin, S.-K.-
dc.contributor.authorPark, J.H.-
dc.date.accessioned2024-01-12T11:09:11Z-
dc.date.available2024-01-12T11:09:11Z-
dc.date.created2022-03-07-
dc.date.issued1998-07-
dc.identifier.issn0000-0000-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/85389-
dc.description.abstract[No abstract available]-
dc.languageEnglish-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.titleSelectively formed InAs quantum dot arrays for device application-
dc.typeConference-
dc.identifier.doi10.1109/IMNC.1998.730091-
dc.description.journalClass1-
dc.identifier.bibliographicCitation1998 International Microprocesses and Nanotechnology Conference, MNC 1998, pp.299 - 300-
dc.citation.title1998 International Microprocesses and Nanotechnology Conference, MNC 1998-
dc.citation.startPage299-
dc.citation.endPage300-
dc.citation.conferencePlaceUS-
dc.citation.conferencePlaceKyoungju-
dc.citation.conferenceDate1998-07-13-
dc.relation.isPartOfDigest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference-
dc.identifier.scopusid2-s2.0-85051438168-
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