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dc.contributor.authorChoi, B.H.-
dc.contributor.authorJung, S.K.-
dc.contributor.authorKim, S.I.-
dc.contributor.authorHwang, S.W.-
dc.contributor.authorPark, J.H.-
dc.contributor.authorKim, Y.-
dc.contributor.authorKim, E.K.-
dc.contributor.authorMin, S.-K.-
dc.date.accessioned2024-01-12T11:09:12Z-
dc.date.available2024-01-12T11:09:12Z-
dc.date.created2022-03-07-
dc.date.issued1998-07-
dc.identifier.issn0000-0000-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/85390-
dc.description.abstract[No abstract available]-
dc.languageEnglish-
dc.publisherInstitute of Electrical and Electronics Engineers-
dc.titleElectrical properties of e-beam exposed silicon dioxides and their application to nano-devices-
dc.typeConference-
dc.identifier.doi10.1109/IMNC.1998.730046-
dc.description.journalClass1-
dc.identifier.bibliographicCitation1998 International Microprocesses and Nanotechnology Conference, MNC 1998, pp.206 - 207-
dc.citation.title1998 International Microprocesses and Nanotechnology Conference, MNC 1998-
dc.citation.startPage206-
dc.citation.endPage207-
dc.citation.conferencePlaceUS-
dc.citation.conferencePlaceKyoungju-
dc.citation.conferenceDate1998-07-13-
dc.relation.isPartOfDigest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference-
dc.identifier.scopusid2-s2.0-85051421356-
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