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dc.contributor.authorKim, Yong Tae-
dc.date.accessioned2024-01-12T11:09:24Z-
dc.date.available2024-01-12T11:09:24Z-
dc.date.created2022-01-14-
dc.date.issued1998-07-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/85399-
dc.titleOrigin of improvement in leakage current characteristics of Pt/SrBi2Ta2O9/Pt capacitors-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationHiroshima SSDM'98, pp.0-
dc.citation.titleHiroshima SSDM'98-
dc.citation.startPage0-
dc.citation.endPage0-
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