New packaging method of field emission display using silicon-to-ITO coated glass bonding

Abstract

Silicon to In2O3:Sn (ITO) coated glass bonding has been developed for packaging of Field Emitter Arrays (FEAs) fabricated on silicon wafer. This paper will focus on a processing and results for silicon to ITO coated glass bonding using anodic bonding process. Lithium oxide doped layer was deposited on ITO coated glass by electron beam evaporation. Silicon to ITO coated glass bonding occurs in the range of temperatures from 260 °C to 320 °C with an applied voltages from 140 VDC to 220 VDC. The bonding strength obtained from tensile test was about 10 MPa under condition of 180 VDC in 320 °C. In order to study the role of the lithium ions in bonding mechanism, secondary ion mass spectroscopy (SIMS) analysis was carried out. The possibility of the packaging method of FED is proposed.