Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Yong Tae | - |
| dc.date.accessioned | 2024-01-12T11:11:53Z | - |
| dc.date.available | 2024-01-12T11:11:53Z | - |
| dc.date.created | 2022-01-14 | - |
| dc.date.issued | 1997-07-01 | - |
| dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/85510 | - |
| dc.title | C-V characteristics of Pt/SrBi2Ta2O9/CeO2/Si structure for non volatile memory devices | - |
| dc.type | Conference | - |
| dc.description.journalClass | 1 | - |
| dc.identifier.bibliographicCitation | European Solid State Device Research Conference, pp.756 - 759 | - |
| dc.citation.title | European Solid State Device Research Conference | - |
| dc.citation.startPage | 756 | - |
| dc.citation.endPage | 759 | - |
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