DSpace at KIST: Reduced Al-Ga interdiffusion in GaAs/AlGaAs multiple quantum well structure by introducing low hydrogen content SiNx capping layer for dielectric cap

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DC Field	Value	Language
dc.contributor.author	Choi, Won Jun	-
dc.date.accessioned	2024-01-12T11:12:48Z	-
dc.date.available	2024-01-12T11:12:48Z	-
dc.date.created	2022-01-14	-
dc.date.issued	1997-01-01	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/85551	-
dc.title	Reduced Al-Ga interdiffusion in GaAs/AlGaAs multiple quantum well structure by introducing low hydrogen content SiNx capping layer for dielectric cap	-
dc.type	Conference	-
dc.description.journalClass	1	-
dc.identifier.bibliographicCitation	미국, pp.419	-
dc.citation.title	미국	-
dc.citation.startPage	419	-
dc.citation.endPage	419	-
dc.relation.isPartOf	Materials Research Society Symposium '97 Proceedings - 직접입력	-

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