Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박재홍 | - |
| dc.contributor.author | 최정혜 | - |
| dc.date.accessioned | 2024-01-12T11:35:27Z | - |
| dc.date.available | 2024-01-12T11:35:27Z | - |
| dc.date.issued | 2019-09-27 | - |
| dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/85799 | - |
| dc.title | 2차원 강유전성 물질 및 이를 이용한 메모리소자 | - |
| dc.type | Patent | - |
| dc.date.registration | 2019-09-27 | - |
| dc.date.application | 2018-03-16 | - |
| dc.identifier.patentRegistrationNumber | 10-2028600 | - |
| dc.identifier.patentApplicationNumber | 2018-0030746 | - |
| dc.publisher.country | KO | - |
| dc.type.iprs | 특허 | - |
| dc.contributor.assignee | 한국과학기술연구원 | - |
- Appears in Collections:
- KIST Patent > 2018
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