Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Seong-Jin | - |
dc.contributor.author | Ju, Byeong Kwon | - |
dc.contributor.author | Lee, Yun Hi | - |
dc.contributor.author | Park, Beom Soo | - |
dc.contributor.author | Baik, Young-Joon | - |
dc.contributor.author | Lim, Sungkyoo | - |
dc.contributor.author | Oh, Myung Hwan | - |
dc.date.accessioned | 2024-01-12T11:38:55Z | - |
dc.date.available | 2024-01-12T11:38:55Z | - |
dc.date.created | 2022-03-07 | - |
dc.date.issued | 1996-07 | - |
dc.identifier.issn | 0000-0000 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/85921 | - |
dc.description.abstract | Stripe-shaped diamond-tip field emitter arrays were fabricated by using transfer mold technique. The tip radius of each diamond emitter was about 300 angstroms. The current density of 800 μA/cm2 was obtained from the current-voltage measurement of the diamond-tip field emitter arrays. The emission current was measured under the pressure of 1×10-4, 1×10-5, 1×10-6 Torr, respectively. No difference in emission characteristics of the field emitter arrays under different pressure condition was observed. | - |
dc.language | English | - |
dc.publisher | IEEE | - |
dc.title | Emission characteristic of diamond-tip FEA fabricated by transfer mold technique | - |
dc.type | Conference | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | 1996 9th International Vacuum Microelectronics Conference, IVMC, pp.526 - 529 | - |
dc.citation.title | 1996 9th International Vacuum Microelectronics Conference, IVMC | - |
dc.citation.startPage | 526 | - |
dc.citation.endPage | 529 | - |
dc.citation.conferencePlace | US | - |
dc.citation.conferencePlace | St.Petersburg, Russia | - |
dc.citation.conferenceDate | 1996-07-07 | - |
dc.relation.isPartOf | Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC | - |
dc.identifier.scopusid | 2-s2.0-0030349725 | - |
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