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dc.contributor.authorKim, Seong-Jin-
dc.contributor.authorJu, Byeong Kwon-
dc.contributor.authorLee, Yun Hi-
dc.contributor.authorPark, Beom Soo-
dc.contributor.authorBaik, Young-Joon-
dc.contributor.authorLim, Sungkyoo-
dc.contributor.authorOh, Myung Hwan-
dc.date.accessioned2024-01-12T11:38:55Z-
dc.date.available2024-01-12T11:38:55Z-
dc.date.created2022-03-07-
dc.date.issued1996-07-
dc.identifier.issn0000-0000-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/85921-
dc.description.abstractStripe-shaped diamond-tip field emitter arrays were fabricated by using transfer mold technique. The tip radius of each diamond emitter was about 300 angstroms. The current density of 800 μA/cm2 was obtained from the current-voltage measurement of the diamond-tip field emitter arrays. The emission current was measured under the pressure of 1×10-4, 1×10-5, 1×10-6 Torr, respectively. No difference in emission characteristics of the field emitter arrays under different pressure condition was observed.-
dc.languageEnglish-
dc.publisherIEEE-
dc.titleEmission characteristic of diamond-tip FEA fabricated by transfer mold technique-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitation1996 9th International Vacuum Microelectronics Conference, IVMC, pp.526 - 529-
dc.citation.title1996 9th International Vacuum Microelectronics Conference, IVMC-
dc.citation.startPage526-
dc.citation.endPage529-
dc.citation.conferencePlaceUS-
dc.citation.conferencePlaceSt.Petersburg, Russia-
dc.citation.conferenceDate1996-07-07-
dc.relation.isPartOfProceedings of the IEEE International Vacuum Microelectronics Conference, IVMC-
dc.identifier.scopusid2-s2.0-0030349725-
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