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dc.contributor.authorLee, Yun Hi-
dc.contributor.authorSong, Man Ho-
dc.contributor.authorJu, Byeong Kwon-
dc.contributor.authorOh, Myung Hwan-
dc.date.accessioned2024-01-12T11:39:00Z-
dc.date.available2024-01-12T11:39:00Z-
dc.date.created2022-03-07-
dc.date.issued1996-07-
dc.identifier.issn0000-0000-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/85925-
dc.description.abstractWe fabricated ZnO:Zn film by rf magnetron sputtering and ZnS:Pr,Ce layer by electron-beam evaporation for color FED application. Also, in order to investigate influence of surface conductivity of phosphor film on the threshold voltage of emission, we fabricated two different kinds of layered structures having an additional conducting layer such as 5 nm thick Sn-doped In2O3 film. CL emission spectrum of sputtered ZnO:Zn (250 nm) film shows a two broad peaks centered 540 nm and 600 nm. The spectra characteristics of ZnS:Pr,Ce films shows white spectrum that covered a whole visible wavelength. One of the effect of an additional surface layer of ITO on ZnO and ZnS phosphor is the shift of spectrum toward shorter wavelength.-
dc.languageEnglish-
dc.publisherIEEE-
dc.titleThin film phosphor prepared by physical vapour deposition for FED application-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitation1996 9th International Vacuum Microelectronics Conference, IVMC, pp.619 - 622-
dc.citation.title1996 9th International Vacuum Microelectronics Conference, IVMC-
dc.citation.startPage619-
dc.citation.endPage622-
dc.citation.conferencePlaceUS-
dc.citation.conferencePlaceSt.Petersburg, Russia-
dc.citation.conferenceDate1996-07-07-
dc.relation.isPartOfProceedings of the IEEE International Vacuum Microelectronics Conference, IVMC-
dc.identifier.scopusid2-s2.0-0030361128-
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