DSpace at KISTKIST Patent2012

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dc.contributor.author이중기-
dc.contributor.author최원창-
dc.contributor.author우주만-
dc.contributor.author김상옥-
dc.contributor.author차이룰 후다야-
dc.contributor.author박지훈-
dc.contributor.author김정섭-
dc.contributor.author김아영-
dc.contributor.author히유-
dc.contributor.author최호석-
dc.date.accessioned2024-01-12T12:31:49Z-
dc.date.available2024-01-12T12:31:49Z-
dc.date.issued2013-11-04-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/86791-
dc.title집전체 표면위에 형성된 고분자패턴을 이용하여 고성능 실리콘 전극제조 및 이를 포함하는 리튬계 이차전지음전극의 제조방법-
dc.typePatent-
dc.date.registration2013-11-04-
dc.date.application2012-03-20-
dc.identifier.patentRegistrationNumber10-1327283-
dc.identifier.patentApplicationNumber2012-0028406-
dc.publisher.countryKO-
dc.type.iprs특허-
dc.contributor.assignee한국과학기술연구원-
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KIST Patent > 2012
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