DSpace at KISTKIST Patent2001

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dc.contributor.author박용주-
dc.contributor.author이정일-
dc.contributor.author한일기-
dc.contributor.author김은규-
dc.contributor.author최원준-
dc.contributor.author박세기-
dc.date.accessioned2024-01-12T13:06:12Z-
dc.date.available2024-01-12T13:06:12Z-
dc.date.issued2005-05-13-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/87531-
dc.titleAIGaAs 삽입층에 의한 InGaAs 양자점의 방사 파장 조정방법-
dc.typePatent-
dc.date.registration2005-05-13-
dc.date.application2001-12-31-
dc.identifier.patentRegistrationNumber10-0491073-
dc.identifier.patentApplicationNumber2001-0088866-
dc.publisher.countryKO-
dc.type.iprs특허-
dc.contributor.assignee한국과학기술연구원-
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KIST Patent > 2001
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