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dc.contributor.authorDae-Young Jeon-
dc.contributor.authorSo Jeong Park-
dc.contributor.authorGyu-Tae Kim-
dc.contributor.authorGerard Ghibaudo-
dc.contributor.authorSebastian Pregl-
dc.contributor.authorThomas Mikolajick-
dc.contributor.authorWalter M. Weber-
dc.date.accessioned2024-01-12T13:09:54Z-
dc.date.available2024-01-12T13:09:54Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/87663-
dc.languageEnglish-
dc.publisher6.12~15, 중국-
dc.subjectScattering-
dc.subjectnull-
dc.subjectJunctionless transistors-
dc.subjectnull-
dc.subjectambipolar conduction-
dc.subjectnull-
dc.subjectSchottky-barrier-
dc.subjectnull-
dc.subjectI-V maps-
dc.titleLess surface roughness scattering effects in highly doped Si-channel and ambipolar conduction behavior with Schottky-barrier contacts-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationICASS2017-
dc.citation.titleICASS2017-
dc.citation.conferencePlaceCC-
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