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제일 원리에 기초한 MOS 소자의 유효 게이트 산화막 두께 결정 방법

Author

고은정; 최정혜

Assignee

한국과학기술연구원

Regitration Date

2020-11-05

Registration No.

10-2177735

Application Date

2018-12-11

Application No.

10-2018-0158976

Country

KO

URI

https://pubs.kist.re.kr/handle/201004/88602

Appears in Collections:

KIST Patent > 2018

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