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dc.contributor.authorHyunsu Ju-
dc.contributor.authorMin Kyu Yang-
dc.contributor.authorGun Hwan Kim-
dc.contributor.authorHan Cheol Ryu-
dc.contributor.authorLee, Jeon Kook-
dc.date.accessioned2024-01-12T15:04:49Z-
dc.date.available2024-01-12T15:04:49Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/89910-
dc.languageEnglish-
dc.publisher10.25~29, 제주-
dc.subjectMnOx-
dc.subjectnull-
dc.subjectresistance switching-
dc.subjectnull-
dc.subjectnon lattice oxygen-
dc.titleElectrical Endurance Characteristic of Resistive Switching MnOx Thin Film Associated with ‘Non-Lattice’ Oxygen Concentration and Interfacial Layer Existence between Electrode and MnOx-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationInternational conference of advanced materials (IUMRS-ICAM 2015)-
dc.citation.titleInternational conference of advanced materials (IUMRS-ICAM 2015)-
dc.citation.conferencePlaceKO-
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