DSpace at KISTKIST Patent2005

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dc.contributor.author김성일-
dc.contributor.author김용태-
dc.contributor.author김인수-
dc.contributor.author김춘근-
dc.contributor.author염민수-
dc.contributor.author김영환-
dc.date.accessioned2024-01-12T15:33:11Z-
dc.date.available2024-01-12T15:33:11Z-
dc.date.issued2011-04-15-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/90355-
dc.titleAlN 열방출층 및 TiN 전극이 적용된 상변화 메모리-
dc.typePatent-
dc.date.registration2011-04-15-
dc.date.application2005-12-16-
dc.identifier.patentRegistrationNumber4724550-
dc.identifier.patentApplicationNumber2005-363771-
dc.publisher.countryJA-
dc.type.iprs특허-
dc.contributor.assignee한국과학기술연구원-
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KIST Patent > 2005
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