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dc.contributor.authorZagarzusem Khurelbaatar-
dc.contributor.authorKim Joung-Hee-
dc.contributor.authorChel-Jong Choi-
dc.contributor.authorKyu-Hwan Shim-
dc.contributor.authorKIM, CHUN KEUN-
dc.contributor.authorKim, Yong Tae-
dc.date.accessioned2024-01-12T16:06:25Z-
dc.date.available2024-01-12T16:06:25Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/91230-
dc.languageEnglish-
dc.subjectGraphene-
dc.subjectgermanium-
dc.subjectSchottky junction-
dc.subjectcurrent transport-
dc.subjecttemperature dependence-
dc.titleTemperature dependent Current Transport Mechanism of Graphene/Ge Schottky Barrier Diode-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationAsia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2014)-
dc.citation.titleAsia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2014)-
dc.citation.conferencePlaceJA-
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