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dc.contributor.authorShin Jaekyun-
dc.contributor.authorKim Kyung-Ho-
dc.contributor.authorDoo-Seung Um-
dc.contributor.authorHochan Lee-
dc.contributor.authorSeongdong Lim-
dc.contributor.authorChang, Joonyeon-
dc.contributor.authorKoo, Hyun Cheol-
dc.contributor.authorMin-Wook Oh-
dc.contributor.authorHyunhyub Ko-
dc.contributor.authorKim Hyung-jun-
dc.date.accessioned2024-01-12T17:33:57Z-
dc.date.available2024-01-12T17:33:57Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/92720-
dc.languageEnglish-
dc.titleGate-Controlled Spin-Orbit Interaction in InAs High-Electron Mobility Transistor Layers Epitaxially Transferred onto Si Substrates-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitation2013 한국자기학회 동계 학술대회-
dc.citation.title2013 한국자기학회 동계 학술대회-
dc.citation.conferencePlaceKO-
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