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dc.contributor.author윤진국-
dc.contributor.author김긍호-
dc.contributor.author홍경태-
dc.contributor.author도정만-
dc.contributor.author이종권-
dc.contributor.author손근형-
dc.contributor.author지영수-
dc.contributor.author김한성-
dc.contributor.author이경환-
dc.date.accessioned2024-01-12T18:02:33Z-
dc.date.available2024-01-12T18:02:33Z-
dc.date.issued2008-03-19-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/93170-
dc.titleWSi2-SiC 나노 복합 피복층 및 그 제조방법-
dc.typePatent-
dc.date.registration2008-03-19-
dc.date.application2006-12-20-
dc.identifier.patentRegistrationNumber10-0816671-
dc.identifier.patentApplicationNumber2006-0131214-
dc.publisher.countryKO-
dc.type.iprs특허-
dc.contributor.assignee한국과학기술연구원-
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KIST Patent > 2006
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