DSpace at KISTKIST Patent2003

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dc.contributor.author송진동-
dc.contributor.author박용주-
dc.contributor.author이정일-
dc.contributor.author한일기-
dc.contributor.author최원준-
dc.date.accessioned2024-01-12T18:30:11Z-
dc.date.available2024-01-12T18:30:11Z-
dc.date.issued2005-08-09-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/93533-
dc.title원자층 성장법을 이용한 반도체 양자점 성장 방법-
dc.typePatent-
dc.date.registration2005-08-09-
dc.date.application2003-10-27-
dc.identifier.patentRegistrationNumber10-0508850-
dc.identifier.patentApplicationNumber2003-0074986-
dc.publisher.countryKO-
dc.type.iprs특허-
dc.contributor.assignee한국과학기술연구원-
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KIST Patent > 2003
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