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dc.contributor.author최원준-
dc.contributor.author박용주-
dc.contributor.author김은규-
dc.contributor.author한일기-
dc.contributor.author이정일-
dc.contributor.author조운조-
dc.contributor.author이정호-
dc.date.accessioned2024-01-12T18:31:05Z-
dc.date.available2024-01-12T18:31:05Z-
dc.date.issued2005-07-13-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/93609-
dc.title양자점 무질서화 기술에서 유전체 덮개층 조합에 의한 InGaAs/GaAs 양자점 에너지 밴드갭 조정 방법-
dc.typePatent-
dc.date.registration2005-07-13-
dc.date.application2001-12-31-
dc.identifier.patentRegistrationNumber0502884-
dc.identifier.patentApplicationNumber2001-0088867-
dc.publisher.countryKO-
dc.type.iprs특허-
dc.contributor.assignee한국과학기술연구원-
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KIST Patent > 2001
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