Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Shin Sang Hoon | - |
| dc.contributor.author | SONG, JIN-DONG | - |
| dc.date.accessioned | 2024-01-12T18:34:13Z | - |
| dc.date.available | 2024-01-12T18:34:13Z | - |
| dc.date.created | 2021-09-29 | - |
| dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/93838 | - |
| dc.language | English | - |
| dc.title | Combine p-type GaSb 2DHG hole device with n-type InGaAs channel for III-V CMOS | - |
| dc.type | Conference | - |
| dc.description.journalClass | 1 | - |
| dc.identifier.bibliographicCitation | International Symposium on Functional Materials (IFFM) | - |
| dc.citation.title | International Symposium on Functional Materials (IFFM) | - |
| dc.citation.conferencePlace | KO | - |
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