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dc.contributor.authorShin Sang Hoon-
dc.contributor.authorSONG, JIN-DONG-
dc.date.accessioned2024-01-12T18:34:13Z-
dc.date.available2024-01-12T18:34:13Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/93838-
dc.languageEnglish-
dc.titleCombine p-type GaSb 2DHG hole device with n-type InGaAs channel for III-V CMOS-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationInternational Symposium on Functional Materials (IFFM)-
dc.citation.titleInternational Symposium on Functional Materials (IFFM)-
dc.citation.conferencePlaceKO-
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