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dc.contributor.authorLee Eunhye-
dc.contributor.authorSONG, JIN-DONG-
dc.contributor.authorM. H. Bae-
dc.contributor.authorHan, Il Ki-
dc.contributor.authorChoi, Won Jun-
dc.contributor.authorS. K. Chang-
dc.date.accessioned2024-01-12T18:34:16Z-
dc.date.available2024-01-12T18:34:16Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/93843-
dc.languageEnglish-
dc.subjectInGaAs-
dc.subjectnanowire-
dc.subjectSi-
dc.subjectantireflection-
dc.titleFormation of InGaAs nanowires on (111) Si for antireflection-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationInternational Symposium on Functional Materials (IFFM)-
dc.citation.titleInternational Symposium on Functional Materials (IFFM)-
dc.citation.conferencePlaceKO-
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