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dc.contributor.authorChong Eu Gene-
dc.contributor.authorLee Sang Yeol-
dc.date.accessioned2024-01-12T22:06:43Z-
dc.date.available2024-01-12T22:06:43Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/97960-
dc.languageEnglish-
dc.titleElectrical properties of amorphous hafnium-indium-zinc-oxide thin film transistors with highly conductive buried layer-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitation7th International Symposium on Transparent Oxide Thin Films for Electronics and Optics-
dc.citation.title7th International Symposium on Transparent Oxide Thin Films for Electronics and Optics-
dc.citation.conferencePlaceJA-
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