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dc.contributor.authorChoi, Junyoung-
dc.contributor.authorPark ki ho-
dc.contributor.authorChun Yoon Soo-
dc.contributor.authorSang Sig Kim-
dc.contributor.authorLee Sang Yeol-
dc.date.accessioned2024-01-12T22:06:45Z-
dc.date.available2024-01-12T22:06:45Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/97963-
dc.languageEnglish-
dc.titleEffect of gallium contents on the threshold voltage shift of solution-processed Ga-doped Si-In-Zn-O thin film transistor-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitation7th International Symposium on Transparent Oxide Thin Films for Electronics and Optics-
dc.citation.title7th International Symposium on Transparent Oxide Thin Films for Electronics and Optics-
dc.citation.conferencePlaceJA-
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