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dc.contributor.authorZang Gang-
dc.contributor.authorWu Zhe-
dc.contributor.authorPark Young Wook-
dc.contributor.authorJeung-hyun Jeong-
dc.contributor.authorJeong, Doo Seok-
dc.contributor.authorYoo, Won Jong-
dc.contributor.authorCHEONG, BYUNG KI-
dc.date.accessioned2024-01-12T23:34:40Z-
dc.date.available2024-01-12T23:34:40Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/99513-
dc.languageEnglish-
dc.subjectphase change memory-
dc.subjectmulti-level cell-
dc.subjectGe-doped SbTe-
dc.titleDemonstration of a high-speed multi-level cell phase-change memory using Ge-doped SbTe-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationEuropean symposium on phase change and ovonic science 2010, pp.147 - 149-
dc.citation.titleEuropean symposium on phase change and ovonic science 2010-
dc.citation.startPage147-
dc.citation.endPage149-
dc.citation.conferencePlaceIT-
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