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dc.contributor.author김성일-
dc.contributor.author박영균-
dc.contributor.author민석기-
dc.contributor.author김은규-
dc.contributor.author김춘근-
dc.contributor.author김용-
dc.date.accessioned2024-01-13T00:02:27Z-
dc.date.available2024-01-13T00:02:27Z-
dc.date.issued1999-06-16-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/99931-
dc.title선택성장법에　의한　고밀도　양자점　어레이　형성방법-
dc.typePatent-
dc.date.registration1999-06-16-
dc.date.application1997-02-21-
dc.identifier.patentRegistrationNumber219837-
dc.identifier.patentApplicationNumber97-5290-
dc.publisher.countryKO-
dc.type.iprs특허-
dc.contributor.assignee한국과학기술연구원-
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