2002-06 | Implantation of N ions on sapphire substrate for improvement of GaN epilayer | Cho, YS; Jhin, J; Park, YJ; Cho, S; Koh, EK; Kim, EK; Kim, G; Byun, D; Min, SK |
2002-06 | Improved crystalline quality of GaN by substrate ion beam pretreatment | Cho, YS; Jhin, J; Koh, EK; Park, YJ; Kim, EK; Kim, G; Min, SK; Byun, D |
1997-10-01 | Measurements of Al concentration in the primary Si crystals from the rheocast Al-15.5 wt% Si alloy | Kim, GH; Lee, JI; Lee, JC; Lee, HI |
2001-01 | Measurements of lattice strain in MOCVD-GaN thin film grown on a sapphire substrate treated by reactive ion beam. | 김현정; 김긍호 |
1995-01 | Measurements of lattice strain in SiO//2Si interface using convergent beam electron diffraction. | 김긍호; 우현정; 최두진 |
2016-03-16 | NH3 adsorption on PtM (Fe, Co, Ni) surfaces: Cooperating effects of charge transfer, magnetic ordering and lattice strain | Bhattacharjee, Satadeep; Yoo, S. J.; Waghmare, Umesh V.; Lee, S. C. |
2018-11-07 | Studies on Catalytic Activity of Hydrogen Peroxide Generation according to Au Shell Thickness of Pd/Au Nanocubes | Kim, Inho; Seo, Myung-gi; Choi, Changhyeok; Kim, Jin Soo; Jung, Euiyoung; Han, Geun-Ho; Lee, Jae-Chul; Han, Sang Soo; Ahn, Jae-Pyoung; Jung, Yousung; Lee, Kwan-Young; Yu, Taekyung |