- | Defect states in silicon after laser processing. | Kim Seong Il; Min Suk-Ki; CHOI WON CHEOL; KIM EUN KYU; CHO HOON YOUNG; KIM CHUN KEUN |
- | Direct shrinkage observation of oxidation induced stacking faults in p-type CZ silicon. | Kim Yong Tae; Min Suk-Ki |
- | Direct transport measurements through an ensemble of if InAs self-assembled quantum dots | 정석구; 최범호; KIM SEOK IL; 현찬경; MIN BYUNG DON; 황성우; PARK JEONG HO; KIM YOUN; KIM EUN KYU; Min Suk-Ki |
- | Effect of atomic bond structure on crystal orientation dependence of carbon doping in GaAs grown by MOCVD | PARK YOUNG KYUN; Kim Seong Il; KIM YOUN; SON CHANG-SIK; KIM EUN KYU; Min Suk-Ki |
- | Effect of bottom electrodes on the structural and electrical properties of the ferroelectric lead titanate (PbTiO//3) thin films. | Kim Yong Tae; Ho Nyung Lee; 이정건; 조성호; Min Suk-Ki |
- | Effect of crystallographic orientation on carbon incorporation into GaAs and AlGaAs epilayers grown by metalorganic chemical vapor deposition. | SON CHANG-SIK; Kim Seong Il; Min Suk-Ki; KIM EUN KYU; KIM YOUN; 최인훈 |
1993-01 | Effects of nitrogen on the stress of plasma deposited tungsten and tungsten nitride thin films. | Kim Yong Tae; S. J. Lee; C. S. Kwon; Y. W. Park; C. C. Lee; C. W. Lee; Min Suk-Ki |
- | Effects of rapid thermal annealing on electrical properties of CBr//4-doped GaAs epilayers grown by atmospheric pressure MOCVD. | SON CHANG-SIK; Kim Seong Il; MIN BYUNG DON; Lee Sang Bae; KIM EUN KYU; Min Suk-Ki; 최인훈 |
- | Electrical and optical properties of quantum wire laser | J. C. Jang; Kim Seong Il; 황승민; KIM HEO JEN; SON CHANG-SIK; J. H. Park; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; KIM TAE WAN |
- | Electrical properties of carbon-doped GaAs epilayers by atmospheric pressure MOCVD using CBr//4. | SON CHANG-SIK; Kim Seong Il; KIM EUN KYU; MIN BYUNG DON; Min Suk-Ki; 최인훈 |
- | Enhanced of lateral growth rate during MOCVD growth on patterned GaAs substrates with CBr//4. | SON CHANG-SIK; 황성민; Kim Seong Il; 황성민; KIM MOO SUNG; Min Suk-Ki; KIM EUN KYU; KIM YOUN |
- | Enhancement of lateral growth rate during MOCVD growth on patterned GaAs substrates with CBr//4. | KIM EUN KYU; S.I. Kim; M.S. Kim; Y. Kim; S.M. Hwang; B.D. Min; C.S. Son; Min Suk-Ki |
- | Enhancement of side wall growth rate during MOVPE growth on patterned substrates with CCl//4. | KIM YOUN; KIM MOO SUNG; Kim Seong Il; 황성민; KANG JOON MO; 박양근; Min Suk-Ki |
- | Epitaxial technology of compound semiconductor by MOCVD. | KIM MOO SUNG; KIM YOUN; EOM KYUNG SOOK; Kim Seong Il; Min Suk-Ki |
- | Fabrication and characterization of homostructure GaAs δ -doped FETs. | KANG KWANG NHAM; Lee Jung Il; KIM YOUN; Han Il Ki; Min Suk-Ki; Y. J. Lee |
- | Fabrication of GaAs/AlGaAs DH laser diode grown by MOCVD. | Kim Seong Il; Min Suk-Ki; KIM MOO SUNG |
- | Fabrication of HEMT employing delta-doping layer grown by MOCVD. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; 김현수 |
- | Fabrication of high-efficiency heteroface AlGaAs/GaAs solar cells grown by MOCVD | 황성민; Kim Seong Il; 이달진; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; KIM YOUN |
- | Fabrication of in-plane gated transistor with electron-beam lighography technique | 한철구; 김광무; 정석구; 최범호; KIM EUN KYU; Min Suk-Ki; PARK JEONG HO |
- | Fabrication of quantum structures by using patterned gallium oxide deposited GaAs substrates | Park Young Ju; Min Suk-Ki; KIM EUN KYU; 한철구; 김광무; 장영준; 오치성; PARK JEONG HO |
- | Fabrication of quantum well high electron mobility transistor grown by MOCVD. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; K. H. Yoo; G. Ihm; S. K. Noh |
- | Fabrication of quantum well laser diode grown by MOCVD. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; C. J. Kim; H. S. Oh |
- | First-principles calculation of the phonon dispersion curves of silicon | PARK YOUNG KYUN; Kim Seong Il; 이지윤; Min Suk-Ki |
1996-06 | Formation of a thin nitrided GaAs layer. | Park Young Ju; KIM EUN KYU; Min Suk-Ki; Kim Seong Il; Han Il Ki; P. O'Keeffe; H. Mutoh; S. Hirose; K. Hara; H. Munekata; H. Kukimoto |
- | Formation of silicon nano-crystallites by electron cyclotron resonance chemical vapor deposition and ion beam assisted electron beam deposition | KIM EUN KYU; Min Suk-Ki; CHOI WON CHEOL; PARK JONG YEUN |
- | Formation of submicron current-blocking layer for high power GaAs/AlGaAs quantum wire array layer. | SON CHANG-SIK; KIM TAE-GEUN; Kim Seong Il; PARK JEONG HO; 황성민; Min Suk-Ki; KIM EUN KYU; KPARK KYUNG HYUN |
- | GaAs/AlGaAs buried channel stripe lasers by single-stage metalorganic chemical vapor deposition on V-grooved substrate | KIM EUN KYU; KIM TAE-GEUN; SON CHANG-SIK; 황성민; Min Suk-Ki |
- | Growth and characterization of GaAs layer by molecular beam epitaxy. | KIM EUN KYU; Min Suk-Ki; S. W. Lee; H. Y. Cho; H. S. Kim; J. H. Park |
- | Growth behavior on V-grooved high miller index GaAs substrates by MOCVD. | Park Young Ju; KIM MOO SUNG; KIM YOUN; LEE MIN-SUK; Kim Seong Il; Min Suk-Ki |
- | Growth interruption dependence of self-assembling behavior of InGaAs quantum dots on exact and misoriented (100) GaAs substrates | KIM YOUN; Min Suk-Ki; KIM EUN KYU; MIN BYUNG DON |