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Showing results 1 to 24 of 24

Issue DateTitleAuthor(s)
-A method of improving dielectric constant and adhesion strength of methysilsesquioxyane by using a NH3 plasma treatment심현상; Kim Yong Tae; 김동준; 전형탁; 추상현; 차국현
-Characteristics of amorphous Ta-Si-N thin film for Cu metallization김동준; 정순필; Kim Yong Tae; Min Suk-Ki; 박종완
-Characteristics of molybdenum nitride thin film by N2+ ion implantation김동준; 김익수; Kim Yong Tae; 박종완
-Characteristics of tungsten boron nitride thin film by plasma enhanced chemical vapor deposition김동준; Kim Yong Tae; 박종완
-Comparison of amorphous and polycrystalline tungsten nitride diffusion barrier for MOCVD-Cu metallization.Kim Yong Tae; 권철순; 김동준; 이창우; 최인훈
-Correlation between surface modification of HSQ films and phase transformation of Cu/W-N bilayers deposition on the NH3 plasma treated HSQ films김동준; 심현상; 박종완; Kim Yong Tae; Kim Seong Il; KIM CHUN KEUN
-Digital deposition of tungsten nitride thin layer by cyclic exposure of WF//6 and NH₃심현상; 김동준; Kim Yong Tae; 전형탁; PARK YOUNG KYUN; Kim Seong Il
-Digital deposition of tungsten nitride thin layer by sequential exposure of tung sten hexafluoride and ammonia심현상; 김동준; Kim Yong Tae; 전형탁
-Effect of NH3 plasma treatment on improvement of reliability of W-B-N/HSQ thin films김동준; 심현상; Kim Yong Tae; 박종완
-Effects of boron implantation on the structural and diffusion barrier properties of W-N thin filmPARK YOUNG KYUN; Kim Yong Tae; 김동준; 박종완
-Effects of boron on diffusion barrier characteristics of PECVD W-B-N films김동준; Kim Yong Tae; 박종완
-Effects of nitrogen on preventing the crystallization of amorphous Ta-Si-N diffusion barrier김동준; Kim Yong Tae; 박종완
-Effects PECVD W-N diffusion barrier on thermal stress and electrical properties of Cu/W-N/SiOF multilevel interconnectKim Yong Tae; 김동준; 이석형; PARK YOUNG KYUN; 김익수; 박종완
-Enhancement of the electical and physical properties of Cu/W-N/HSQ interconnection scheme by NH₃ plasma treatment김동준; 심현상; Kim Yong Tae; KIM CHUN KEUN; 박종완
-High performance of W-B-N schottky contact to GaAsKim Yong Tae; 이창우; 김동준
-Improvement in diffusion barrier properties of PECVD W-N thin film by low energy BF2+ implantation김동준; Kim Yong Tae; PARK YOUNG KYUN; 심현상; 박종완
-Improvement in the characteristics of ammonia plasma treated MSQ(Methyl Silsesquioxane)심현상; 김동준; KIM CHUN KEUN; Kim Seong Il; Kim Yong Tae; 전형탁
-Reliability of Cu/W-N thin films deposited on low dielectric constant SiO:F ILD이석형; 김동준; 양성훈; 박정원; 손세일; 오경희; Kim Yong Tae; 박종완
2000-01-08TaSiNx확산 방지막의 제조방법과 그를 이용한 반도체 소자의 접촉접합및 다층금속 배선김동준; 김용태
1997-10Thermal stabilities of PECVD W-B-N thin films as a diffusion barrier.김용태; 김동준; 이창우; 박종완
2023-09-18다공성 박막을 이용한 메쉬형 분무 장치 및 이의 제조방법이병철; 강동현; 심신용; 성혜정; 박진수; 박기주; 김동준
-질소이온 주입된 질화텅스텐박막의 구리배선용 확산방지막 특성 .Kim Yong Tae; 권철순; 김동준; Min Suk-Ki
2000-02-10초고집적 기억소자 및 비기억소자를 위한WBxNy확산방지막 제조방법 및  그를 이용한 다층금속연결 배선방법김동준; 김용태
-(Undefined)Kim Yong Tae; 김동준; 박종완; 권철순; Min Suk-Ki

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