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Showing results 1 to 27 of 27

Issue DateTitleAuthor(s)
2001-07A new ferroelectric gate structure for low power operation of non volatile memory devices김용태; 심선일; 김성일, et al
1999-03Characteristics of SrTa2Bi2O9 thin films grown by MOCVD using a new strontium tantalum ethoxide (Sr[Ta(OEt)6]2) source김용태; 박영균; 신동석, et al
2000-01Characteristics of the crystal structure and electrical properties of Pt/SrBi2Ta2O9/ZrO2/Si structure최훈상; 김은홍; 김용태, et al
2002-08Crystal structure and electrical properties Pt/SrBi2Nb2O9/ZrO2/Si ferroelectric gate structure최훈상; 임건식; 이종한, et al
2001-07Crystal structure and electrical properties Pt/SrBi2Ta2O9/ZrO2/Si최훈상; 김은홍; 최인훈, et al
2003-11Deposition of Iridium Oxide Thin Films as Bottom Electrodes of Ferroelectric Capacitors허재성; 최훈상; 이종한, et al
2002-07Effect of hydrogen annealing on electrical properties of Bi-layered perovskite thin films김춘근; 김익수; 최훈상, et al
2002-11Effect of low pressure annealing for low temperature crystallization of SrBi//2Ta//2O//9 ferroelectric thin films최훈상; 이관; 임근식, et al
2001-06Effects of Bi content on electrical properties of Pt/SrBi//2Nb//2O//9/Si ferroelectric gate structure김용태; 김성일; 최훈상, et al
2002-02Effects of Bi content on electrical properties of Pt/SrBi2Nb2O9/Si ferroelectric gate structure강동훈; 최훈상; 이관, et al
2001-09Effects of Sr/Bi composition ratio on ferroelectric properties of SrBi//2Bb//2O//9 thin films김용태; 최훈상; 김성일, et al
2000-07Effects of voltage distribution in Pt/SrBi2Ta2O9/Ta2O5/Si structure on memory window of ferroelectric gate김용태; 최훈상; 박건상, et al
2001-11EL-MoM2 effects of Ta2O5 and Al2O3 buffer insulators on electrical characteristics of Pt/SrBi2Ta2O9/Si gate structure최훈상; 김용태; M. Ischida, et al
2001-10EL-MoM5 effects of Bi/Sr stoichiometric ratio on electrical properties of Pt/SrBi2Nb2O9/Si ferroelectric gate structure김용태; 김성일; 최인훈, et al
2001-04Electrical characteristics of Pt/SrBi2Ta2O9/Ta2O5/Si using Ta2O5최훈상; 김용태; 김성일, et al
2001-12Electrical properties of Pt/SrBi2Ta2O9/Ta2O5/Si ferroelectric gate structure최훈상; 박군상; 허재성, et al
2000-11Electrical properties of Pt/SrBi2Ta2O9/Ta2O5/Si ferroelectric gate structure최훈상; 김용태; 김성일, et al
2000-07Electrical properties of Pt/SrBi2Ta2O9/ZrO2/Si ferroelectric gate structure최훈상; 김용태; 김은홍, et al
2003-08High-density quantum nanostructure for single mode distributed feedback semiconductor lasers by one-step growth손창식; 백종협; 김성일, et al
2003-11Hydrogen-induced degradation and passivation of ferroelectric SrBi2Ta2O9 thin films by Au top electrode최훈상; 성현주; 서승건, et al
2003-11Improvement of electrical properties of ferroelectric gate oxide structure by using Al₂O₃ thin films as buffer insulator최훈상; 임근식; 이종한, et al
2001-07Pt/SrBi2Nb2O9/Si 게이트 구조의 전기적 특성에 대한 Bi 함량의 효과최훈상; 조금석; 김용태, et al
2000-04SrBi₂Ta₂O9 thin films grown by MOCVD using a novel double metal alkoxide precursor신동석; 최훈상; 김용태, et al
2002-11Structural and electrical characteristics of ZrO ₂ as a gate dielectric and buffer layer grown by RF magnetron sputtering임근식; 최훈상; 이종한, et al
1999-06The changes of the properties of Pt/SrBi2Ta2O9/Pt capacitors and Pt/SrBi2Ta2O9/CeO2/Si structures by post-annealing and their origin신동석; 최훈상; 이호녕, et al
2001-06The effect of ZrO2 buffer layer on electrical properties in Pt/SrBi2Ta2O9/ZrO2 Si ferroelectric gate oxide structure최훈상; 김은홍; 최인훈, et al
2002-07The effects of various bottom electrodes in MFM structure on the ferroelectric properties of SrBi2Nb2O9 thin films using RF magnetron sputtering최훈상; 이종한; 임건식, et al