| 2006-01-09 | Atomic arrangement of Al-induced clusters on Si(001) surface at high temperature | Seo, JH; Park, JY; Jung, SK; Yoo, KH; Whang, CN; Kim, SS; Choi, DS; Chae, KH |
| 2001-04-01 | Atomic structure of Ba layer on Si(001)-(2 x 1) surface studied by low energy ion scattering | Cho, WS; Kim, JY; Kim, SS; Choi, DS; Jeong, K; Lyo, IW; Whang, CN; Chae, KH |
| 2003-02 | Atomic structure of Cs grown on Si(001)(2x1) surface by coaxial impact collision ion scattering spectroscopy | Kim, JY; Park, JY; Seo, JH; Whang, CN; Kim, SS; Choi, DS; Kang, HJ; Chae, KH |
| 2003-05-10 | Atomic structure of Cs layer grown on Si(001)(2 x 1) surface at room temperature | Kim, JY; Park, JY; Seo, JH; Whang, CN; Kang, HJ; Kim, SS; Choi, DS; Chae, KH |
| 2000-05-10 | Atomic structure of ultrathin Co layer on Si(001)(2 x 1) at room temperature | Cho, WS; Kim, JY; Park, NG; Lyo, IW; Jeong, K; Kim, SS; Choi, DS; Whang, CN; Chae, KH |
| 2001-06 | Blue and red luminescence from Si ion-irradiated SiO2/Si/SiO2 layers | Son, JH; Kim, TG; Shin, SW; Kim, HB; Lee, WS; Im, S; Song, JH; Whang, CN; Chae, KH |
| 2004-11-22 | Comparison of visible photoluminescence from Si ion-irradiated SiO2/Si/SiO2 films fabricated by ion beam sputtering deposition and electron beam evaporation | Kim, HB; Son, JH; Whang, CN; Chae, KH |
| 2001-04-20 | Compositional changes in the surface layers of the Cu3Au(100) below the bulk transition temperature | Oh, DH; Kang, HJ; Chae, KH; Whang, CN; King, BV; O'Connor, DJ; Moon, DW |
| 2004-06 | Control of magnetic anisotropy by ion-beam-mixing method under external magnetic field | Yune, JH; Kim, HB; Kim, SH; Whang, CN; Chae, KH |
| 1998-12 | Defect versus nanocrystal luminescence emitted from room temperature and hot-implanted SiO2 layers | Jeong, JY; Im, S; Oh, MS; Kim, HB; Chae, KH; Whang, CN; Song, JH |
| 1998-12 | Defect vs. nanocrystal luminescence emitted in Si-implanted SiO2 layers | Jeong, JY; Im, S; Oh, MS; Kim, HB; Chae, KH; Whang, CN; Song, JH |
| 2000-10 | Defect-related luminescence and carrier transport in Ge-implanted SiO2 layers on n-Si and p-Si | Lee, WS; Bae, HS; Im, S; Kim, HB; Chae, KH; Whang, CN; Song, JH |
| 2000-08-15 | Effects of Si-dose on defect-related photoluminescence in Si-implanted SiO2 layers | Kim, HB; Kim, TG; Son, JH; Whang, CN; Chae, KH; Lee, WS; Im, S; Song, JH |
| 2000-10 | Electronic properties of ion-beam-mixed Co/Pt multilayered films | Chang, GS; Kim, SH; Son, JH; Shin, SW; Chae, KH; Lee, J; Jeong, K; Whang, CN; Kurmaev, EZ; Moewes, A; Lee, YP |
| 2004-02 | Ellipsometric spectroscopy study of Ar ion-beam mixed SiO2/Si/SiO2 layers | Kim, HB; Son, JH; Whang, CN; Chae, KH |
| 1999-02-15 | Enhancing defect-related photoluminescence by hot implantation into SiO2 layers | Im, S; Jeong, JY; Oh, MS; Kim, HB; Chae, KH; Whang, CN; Song, JH |
| 2005-05-10 | Initial adsorption structure of ethylene on Si(001) surface at room temperature | Seo, JH; Park, JY; Whang, CN; Kim, SS; Choi, DS; Chae, KH |
| 2006-04 | Interface study of ion irradiated Cu/Ni/Cu(002)/Si magnetic thin film by X-ray reflectivity | Kim, TG; Lee, JH; Song, JH; Chae, KH; Shin, SW; Hwang, HM; Lee, J; Jeong, K; Whang, CN; Lee, JS; Lee, KB |
| 2002-04 | Ion beam induced atomic transport in bilayer systems | Son, JH; Kim, TG; Chang, GS; Whang, CN; Song, JH; Chae, KH |
| 2004-09 | Ion scattering Spectroscopy study of Si(001)c(4 x 4)-C surface reconstruction | Park, JY; Seo, JH; Kim, JY; Whang, CN; Kim, SS; Choi, DS; Chae, KH |
| 2000-10 | Light-emitting properties of Si-ion-irradiated SiO2/Si/SiO2 layers | Kim, HB; Son, JH; Whang, CN; Chae, KH; Lee, WS; Im, S; Kim, SO; Woo, JJ; Song, JH |
| 2004-05 | Modification of interface magnetic anisotropy by ion irradiation on epitaxial Cu/Ni/Cu(002)/Si(100) films | Lee, JS; Lee, KB; Park, YJ; Kim, TG; Song, JH; Chae, KH; Lee, J; Whang, CN; Jeong, K; Kim, DH; Shin, SC |
| 2001-01-15 | Optical and electrical properties of Ge-implanted SiO2 layers on n-Si and p-Si | Lee, WS; Jeong, JY; Kim, HB; Chae, KH; Whang, CN; Im, S; Song, JH |
| 2003-09 | Optimization of tunneling magnetotransport and thermal properties in magnetic tunnel junctions by rapid thermal anneal | Lee, KI; Chae, KH; Lee, JH; Ha, JG; Rhie, K; Lee, WY; Shin, KH |
| 1999-07 | Photoluminescence emitted from Si vs. Ge nanocrystals embedded in a SiO2 matrix | Jeong, JY; Im, SI; Oh, MS; Kim, HB; Chae, KH; Whang, CN; Song, JH |
| 2000-01-19 | Photoluminescence from Si ion irradiated SiO2/Si/SiO2 films with elevated substrate temperature | Kim, HB; Son, JH; Chae, KH; Jeong, JY; Lee, WS; Im, S; Song, JH; Whang, CN |
| 1999-07 | Photoluminescence induced by Si-implantation into SiO2 layers at elevated temperatures | Kim, HB; Kim, TG; Chae, KH; Whang, CN; Jeong, JY; Oh, MS; Im, S; Song, JB |
| 2000-03 | Photoluminescences from Si nanocrystals in ion-beam-mixed Si/SiO2 layers | Chae, KH; Son, JB; Kim, HB; Im, S; Lyo, IW; Whang, CN |
| 2001-06 | Photoresponse of Si detector based on n-ZnO/p-Si and n-ZnO/n-Si structures | Kim, HY; Kim, JH; Kim, YJ; Chae, KH; Whang, CN; Song, JH; Im, S |
| 2001-03 | Soft X-ray fluorescence and photoluminescence of Si nanocrystals embedded in SiO2 | Chang, GS; Son, JH; Chae, KH; Whang, CN; Kurmaev, EZ; Shamin, SN; Galakhov, VR; Moewes, A; Ederer, DL |
