| 2008-03 | Characteristics and fabrication of nanohole array on InP semiconductor substrate using nanoporous alumina | Jung, Mi; Lee, Seok; Byun, Young Tae; Jhon, Young Min; Kim, Sun Ho; Woo, Deok-Ha; Mho, Sun-il |
| - | Effect of reactive gas of fluorides on Si etching by using ICP-RIE | Sang-Heon Kim; Jung, Sung Mok; Kim, Young-Hwan |
| 2004-12 | Etch stop characteristics of SrBi2Ta2O9 thin film by using CeO2 buffer layer | Kwon, YS; Il Shim, S; Kim, SI; Kim, YH; Choi, IH |
| - | Fabrication of Size Controlled Nanohole Array on III-V Semiconductor substrate by ICP-RIE using nanoporous alumina mask | Mi Jung; Lee, Seok; Byun, Young Tae; Jhon, Young Min; Kim, Sun Ho; Mho,Sun-il; Woo, Deok Ha |
| - | Formation of 30 nm GaAs Nanohole Array by ICP-RIE using Nanoporous Alumina Mask | Mi Jung; Byun, Young Tae; Jhon, Young Min; Lee, Seok; Kim, Sun Ho; Mho,Sun-il; Woo, Deok Ha |
| - | Formation of GaAs Nanohole Array using Nanoporous Alumina Mask by Inductively Coupled Plasma Reactive Ion Etching | Jung mi; Jung Yong-Woo; Lee, Seok; Byun, Young Tae; Jhon, Young Min; Kim, Sun Ho; Mho,Sun-il; Woo, Deok Ha |
| - | PL characteristic and fabrication of photonic crystal structure on GaAs Substrate using nanoporous alumina | Mi Jung; Baik Jai Hyun; Lee, Seok; Jhon, Young Min; Byun, Young Tae; Kim, Sun Ho; Woo, Deok Ha; Mho,Sun-il; Kim.Keunjoo |
