| - | A new ferroelectric gate structure for low power operation of non volatile memory devices | Kim Yong Tae; 심선일; Kim Seong Il; 최훈상; 최인훈; Makoto Ishida |
| - | Achievment of high memory window of YMnO3/Si gate by thermal treatment in nitrogen ambient | 김익수; 최재형; Kim, Yong Tae; 최인훈 |
| 1999-01 | Correlation between morphological and electrical characteristics of Pt/SrBi2Ta2O9/CeO2/Si capacitors | Lee, HN; Choh, SH; Shin, DS; Kim, YT |
| - | Effect of rapid thermal annealing on the memory window of ferroelectric YMnO3 thin films deposited on Si substrates | 김익수; Ho Nyung Lee; Kim Yong Tae; 최인훈 |
| - | Effect of thickness of ferroelectrics and insulators on the memory window of ferroelectric gate capacitors | Sung-Kyun Lee; Kim Yong Tae; KIM CHUN KEUN; Kim Seong Il; 이철의 |
| - | Effects of Bi content on electrical properties of Pt/SrBi2Nb2O9/Si ferroelectric gate structure | KANG. DONGHOON; 최훈상; 이관; Kim Yong Tae; 이종한; 이건식; Kim Seong Il; 최인훈 |
| 1999-12 | Effects of YSZ buffer layer on the electrical properties in Pt/SrBi2TaNbO9/YSZ/Si structure | Jang, SM; Kim, JH; Lee, JK; Park, JW |
| - | Electrical properties of Pt/SrBi2Ta2O9/ZrO2/Si ferroelectric gate structure | 최훈상; Kim Yong Tae; 김은홍; 최인훈 |
| - | Interface control in ferroelectric gate field effect transistor | 장세명; 김주형; Lee Jeon Kook; 박종완 |
| - | Relationships among coercive voltage, memory window and electric distribution in ferroelectric gate structure | Sung-Kyun Lee; Kim Yong Tae; Kim Seong Il; 이철의 |
