Showing results 3 to 5 of 5
Issue Date | Title | Author(s) |
---|---|---|
- | Effect of thickness of ferroelectrics and insulators on the memory window of ferroelectric gate capacitors | Sung-Kyun Lee; Kim Yong Tae; KIM CHUN KEUN; Kim Seong Il; 이철의 |
- | Effects of charge trapping on the asymmetrical shift of memory window in MFIS devices | 이용원; 강동; 노용한; Sung-Kyun Lee; Kim Yong Tae |
- | Relationships among coercive voltage, memory window and electric distribution in ferroelectric gate structure | Sung-Kyun Lee; Kim Yong Tae; Kim Seong Il; 이철의 |