1998-12 | Effects of BF2 and B implantation-doping on crystalline degradation of pseudomorphic metastable Ge0.06Si0.94 | Im, S; Oh, MS; Joo, MH; Kim, HB; Kim, HK; Song, JH |
1999-01 | Effects of BF2+ implantation on the strain-relaxation of pseudomorphic metastable Ge0.06Si0.94 alloy layers | Oh, MS; Joo, MH; Im, S; Kim, HB; Kim, HK; Song, JH |
- | Effects of Bi content on electrical properties of Pt/SrBi2Nb2O9/Si ferroelectric gate structure | KANG. DONGHOON; 최훈상; 이관; Kim Yong Tae; 이종한; 이건식; Kim Seong Il; 최인훈 |
1990-02-01 | EFFECTS OF LEAKAGE CURRENT ON ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY SIGNALS FOR MIDGAP LEVELS IN GAAS | KIM, EK; CHO, HY; MIN, SK; CHOH, SH; NAMBA, S |
1998-09 | Effects of morphological changes of Pt/SrBi2Ta2O9 interface on the electrical properties of ferroelectric capacitor | Shin, DS; Lee, HN; Lee, CW; Kim, YT; Choi, IH |
2002-06 | Effects of NH3 plasma treatment on methyl silsequioxane for copper multi-level interconnect | Sim, HS; Kim, YT; Jeon, H |
1997-01 | Electrical properties of Pb(Zr0.52Ti0.48)O-3 thin films prepared by sol-gel processing | Paik, DS; Shin, HY; Choi, HW; Park, YW; Yoon, SJ; Park, CY |
2015-11 | Improved Dielectric Properties of CaCu3Ti4O12 films with a CaTiO3 Inter layer on Pt/TiO2/SiO2/Si Substrates Prepared by Pulsed Laser Deposition | Lee, Sung-Yun; Kim, Hui Eun; Jo, William; Kim, Young-Hwan; Yoo, Sang-Im |
- | Improvement of electrical properties by controlling nickel plating termperatures for all solid alumina capacitors | Jeong Myung sun; 주병권; Oh, Young-Jei; Lee, Jeon Kook |
1999-04 | Parameter extraction in non-ideal thermionic emission diodes | Lee, JI; Brini, J; Boussey, J; Dimitriadis, CA |
2014-12-24 | Structure and Electrical Properties of Al-Doped HfO2 and ZrO2 Films Grown via Atomic Layer Deposition on Mo Electrodes | Yoo, Yeon Woo; Jeon, Woojin; Lee, Woongkyu; An, Cheol Hyun; Kim, Seong Keun; Hwang, Cheol Seong |