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Effects of Bi content on electrical properties of Pt/SrBi2Nb2O9/Si ferroelectric gate structure

Authors

KANG. DONGHOON; 최훈상; 이관; Kim Yong Tae; 이종한; 이건식; Kim Seong Il; 최인훈

Citation

제9회 한국반도체학술대회, pp.605 - 606

Keywords

Bi content; SBN; ferroelectric gate; leakage current

URI

https://pubs.kist.re.kr/handle/201004/107106

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KIST Conference Paper > Others

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