Showing results 5 to 9 of 9
Issue Date | Title | Author(s) |
---|---|---|
2023-01 | Logic and Memory Ferroelectric Field-Effect-Transistor Using Reversible and Irreversible Domain Wall Polarization | Kuk, Song-Hyeon; Han, Seungmin; Lee, Dong Hyun; Kim, Bong Ho; Shim, Joonsup; Park, Min Hyuk; Han, Jae-Hoon; Kim, Sang-Hyeon |
2023-06 | Memory window enhancement in n-type ferroelectric field-effect transistors by engineering ozone exposure in atomic layer deposition of HfZrOx films | 전지훈; Kuk, Song-Hyeon; 조아진; Baek, Seung-Hyub; Kim, Sang-Hyeon; Kim, Seong Keun |
2023-05 | Oxygen Scavenging in HfZrOx-Based n/p-FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement | Kim, Bong Ho; Kuk, Song-Hyeon; Kim, Seong Kwang; Kim, Joon Pyo; Suh, Yoon-Je; Jeong, Jaeyong; Geum, Dae-Myeong; Baek, Seung-Hyub; Kim, Sang Hyeon |
2023-05 | Proposal of P-Channel FE NAND with High Drain Current and Feasible Disturbance for Next Generation 3D NAND | Kuk, Song-Hyeon; Han, Jae-Hoon; Kim, Bong Ho; Kim, Junpyo; Kim, Sang-Hyeon |
2023-06-11 | Strategy for 3D Ferroelectric Transistor: Critical Surface Orientation Dependence of HfZrOx on Si | Kuk, Song-Hyeon; Han, Jae Hoon; Han, Jae-Hoon; Kim, Bong Ho; Kim, Joon Pyo; Kim, Sang-Hyeon |