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Showing results 6 to 8 of 8

Issue DateTitleAuthor(s)
2010-11Modified Potential Well Formed by Si/SiO2/TiN/TiO2/SiO2/TaN for Flash Memory ApplicationZhang, Gang; Ra, Chang Ho; Li, Hua-Min; Shen, Tian-zi; Cheong, Byung-ki; Yoo, Won Jong
2012-10Modified write-and-verify scheme for improving the endurance of multi-level cell phase-change memory using Ge-doped SbTeZhang, Gang; Wu, Zhe; Jeong, Jeung-hyun; Jeong, Doo Seok; Yoo, Won Jong; Cheong, Byung-ki
2011-03Multi-level cell storage with a modulated current method for phase-change memory using Ge-doped SbTeZhang, Gang; Wu, Zhe; Jeong, Jeung-Hyun; Jeong, Doo Seok; Yoo, Won Jong; Cheong, Byung-ki
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