2021-06 | Large-Area Bernal-Stacked Bilayer Graphene Film on a Uniformly Rough Cu Surface via Chemical Vapor Deposition | Son, Myungwoo; Jang, Jaewon; Kim, Gi-Hwan; Lee, Ji-Hwan; Chun, Dong Won; Bae, Jee Hwan; Kim, In S.; Ham, Moon-Ho; Chee, Sang-Soo |
2002-11 | Metalorganic atomic layer deposition of TiN thin films using TDMAT and NH3 | Kim, HK; Kim, JY; Park, JY; Kim, Y; Kim, YD; Jeon, H; Kim, WM |
1997-05 | Mo- 화합물의 확산방지막으로서의 성질에 관한 연구 | 김지형; 이용혁; 권용성; 염근영; 송종한 |
1997-11-15 | Nanostructured Ta-Si-N diffusion barriers for Cu metallization | Kim, DJ; Kim, YT; Park, JW |
1999-07 | New method to prepare W-B+-N ternary barrier to Cu diffusion by implanting BF2+ ions into W-N thin film | Kim, DJ; Kim, YT; Park, JW |
1998-01 | RF power dependence of stresses in plasma deposited low resistive tungsten films for VLSI devices | 이창우; 고민경; 오환원; 우상록; 윤성로; 김용태; 박영균; 고석중 |
- | Stress evolution and diffusion barrier performance of La0.67Sr0.33MnO3 (LSMO)/WCN/Si structure | Chang Woo Lee; Kim, Yong Tae; Akihiro Wakahara; KIM Hee Joon |
2000-09 | Thermal stability of tungsten-boron-nitride thin film as diffusion barrier | Park, YK; Kim, SI; Kim, YT; Lee, CW |