2003-09 | Maximum power CW 2.45-W 1.55-mu m InGaAsP laterally tapered laser diodes | Heo, DC; Han, IK; Lee, JI; Jeong, JC |
- | Optical gain and α-factor in InAs quantum dot laser diodes | Kim Kyoung Chan; T.G. Kim; Han, Il Ki; Youngchae, Yoo; Lee, Jung Il |
- | Structural optical properties of InAs/GaAs quantum dots grown by atomic layer MBE and its application to 1.13 um laser diodes | SONG, JIN-DONG; 박영민; Shin, Jae Cheol; DU-CHANG HEO; 배형철; 임재구; Park, Young Ju; Choi, Won Jun; Han, Il Ki; Cho, Woon Jo; Lee, Jung Il; 김형석; 박찬경 |
- | Study on optical properties of InAs/InGaAs five-stacked quantum-dot laser diode using reactive ion etching | Youngchae, Yoo; Yoon Hong; Kim Kyoung Chan; Jeong Jin Wook; Lee, Jung Il; Gil-Ho Kim; Han, Il Ki |
- | Study on the characteristics of InGaAsP/InGaAs MQW-LD with differently p-doped and asymmetric structures | Han Il Ki; Heo Duchang; Choi Won Jun; Lee Jung Il; 이주인 |
- | The characteristics of 3-stacked InGaAs/GaAs QD quantum dot lasers grown by atomic layer molecular beam epitaxy | Heo, Duchang; SONG, JIN-DONG; Choi, Won Jun; Lee, Jung Il; Jeong, Jichai; Han, Il Ki |
- | The study on InGaAsP/InGaAs MQW-LD with symmetric and asymmetric separate confinement heterostructure | 허두창; Bae, Hyung Cheol; Lee, Jung Il; Jeong, Jichai; Han, Il Ki |
2007-06 | Thermal analysis of InAs quantum dot laser diodes with an additional Au layer on p-metal | Jung, Jung Hwa; Kim, Hyun Jae; Kim, Kyoung Chan; Lee, Jung Il; Han, Il Ki |