KIST Library Institutional Repository

Structural optical properties of InAs/GaAs quantum dots grown by atomic layer MBE and its application to 1.13 um laser diodes

Other Titles

원자층 성장기법으로 제작된 InAs/GaAs 양자점의 구조적ㆍ광학적 특성과 1.13 um 레이저 다이오드에의 응용

Authors

SONG, JIN-DONG; 박영민; Shin, Jae Cheol; DU-CHANG HEO; 배형철; 임재구; Park, Young Ju; Choi, Won Jun; Han, Il Ki; Cho, Woon Jo; Lee, Jung Il; 김형석; 박찬경

Citation

제10회 광전자 및 광통신 학술회의, v.10, pp.511 - 512

Keywords

InAs; quantum dots; atomic layer epitaxy; laser diodes

URI

https://pubs.kist.re.kr/handle/201004/105937

Appears in Collections:

KIST Conference Paper > Others

Files in This Item:

There are no files associated with this item.

Export

RIS (EndNote)

XLS (Excel)

XML