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Browsing byAuthorBowers, John E.

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Showing results 14 to 18 of 18

Issue DateTitleAuthor(s)
2019-11Linewidth Enhancement Factor in InAs/GaAs Quantum Dot Lasers and Its Implication in Isolator-Free and Narrow Linewidth ApplicationsZhang, Zeyu; Jung, Daehwan; Norman, Justin C.; Chow, Weng W.; Bowers, John E.
2019-06Physical Origin of the Optical Degradation of InAs Quantum Dot LasersBuffolo, Matteo; Samparisi, Fabio; De Santi, Carlo; Jung, Daehwan; Norman, Justin; Bowers, John E.; Herrick, Robert W.; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
2020-07-14Recombination-enhanced dislocation climb in InAs quantum dot lasers on siliconMukherjee, Kunal; Selvidge, Jennifer; Jung, Daehwan; Norman, Justin; Taylor, Aidan A.; Salmon, Mike; Liu, Alan Y.; Bowers, John E.; Herrick, Robert W.
2019-03-11Reduced thermal conductivity of epitaxial GaAs on Si due to symmetry-breaking biaxial strainVega-Flick, Alejandro; Jung, Daehwan; Yue, Shengying; Bowers, John E.; Liao, Bolin
2019-12The Importance of p-Doping for Quantum Dot Laser on Silicon PerformanceNorman, Justin C.; Zhang, Zeyu; Jung, Daehwan; Shang, Chen; Kennedy, M. J.; Dumont, Mario; Herrick, Robert W.; Gossard, Arthur C.; Bowers, John E.
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