2000-08 | La-Ca-Mn-O thin film based thermistor for measuring low temperature of 77-230 K | Song, JH; Kim, KF; Jung, HJ; Choi, DK; Choi, WK |
2003-01-13 | Lasing characteristics of InGaAs/InGaAsP multiple-quantum-well optical thyristor operating at 1.561 mu m | Kim, DG; Lee, HH; Choi, WK; Choi, YW; Lee, S; Woo, DH; Byun, YT; Kim, JH; Kim, SH; Nakano, Y |
2005-01-10 | Lasing characteristics of InGaAs/InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor with vertical window | Choi, WK; Kim, DG; Choi, YW; Lee, S; Woo, DH; Kim, SH |
2004-08 | Low-energy ion beam treatment of alpha-Al2O3(0001) and improvement of photoluminescence of ZnO thin films | Park, JY; No, YS; Park, BJ; Lee, HW; Choi, JW; Kim, JS; Ermakov, Y; Yoon, SJ; Oh, YJ; Choi, WK |
2001-06-11 | Low-resistance and nonalloyed ohmic contacts to plasma treated ZnO | Lee, JM; Kim, KK; Park, SJ; Choi, WK |
2000-09-11 | Low-resistance Ti/Au ohmic contacts to Al-doped ZnO layers | Kim, HK; Han, SH; Seong, TY; Choi, WK |
1997-04-01 | Low-temperature growth of SnOx thin films using reactive ion-assisted deposition | Cho, JS; Song, SK; Jung, HJ; Koh, SK; Choi, WK; Yoon, KH |
2006-01-01 | Luminescence of bound excitons in epitaxial ZnO thin films grown by plasma-assisted molecular beam epitaxy | Jung, YS; Choi, WK; Kononenko, OV; Panin, GN |
1998-05 | Metallization of Cu on polytetrafluoroethylene modified by keV Ar+ ion irradiation | Cho, JS; Choi, WK; Koh, SK; Yoon, KH |
1999-02 | MeV He-4(++) channeling studies of epitaxially grown Pt films on Al2O3(0001) | Song, JH; Choi, WK; Kim, KH; Lee, JC; Kim, SC; Kim, HB; Lee, MH; Jeong, K; Whang, CN |
1999-11-16 | New pretreatment method of sapphire for GaN deposition | Byun, D; Kim, HJ; Hong, CH; Park, CS; Kim, G; Koh, SK; Choi, WK; Kum, DW |
2003-04 | Optical characteristics of PnpN optical thyristor operating at 1.55 mu m | Kim, DG; Lee, HH; Choi, WK; Lee, JJ; Choi, YW; Lee, S; Woo, DH; Byun, YT; Kim, JH; Kim, SH; Futakuchi, N; Nakano, Y |
1999-07 | Optical properties of PLT films with various composition on quartz and modifications of their surfaces | Yoon, YS; Choi, WK; Koh, SK; Jung, HJ |
2003-07 | Optimal operation of the Pressure Swing Adsorption (PSA) process for CO2 recovery | Choi, WK; Kwon, TI; Yeo, YK; Lee, H; Song, HK; Na, BK |
1997-10-01 | Oxidation process from SnO to SnO2 | Choi, WK; Sung, H; Kim, KH; Cho, JS; Choi, SC; Jung, HJ; Koh, SK; Lee, CM; Jeong, K |
1998-07 | Oxygen distribution in the heteroepitaxially grown Y2O3 films on Si substrates | Kim, HB; Cho, MH; Whangbo, SW; Whang, CN; Choi, SC; Choi, WK; Song, JH; Kim, SO |
2000-11 | Photoluminescence and heteroepitaxy of ZnO on sapphire substrate (0001) grown by rf magnetron sputtering | KIM KYOUNG KOOK; SONG JAE HOON; Jung, HJ; Choi, WK; Park, SJ; Song, JH; Lee, JY |
2004-01 | Physical and electrical properties of ultrathin HfO2/HfSixOy stacked gate dielectrics on compressively strained-Si0.74Ge0.26/Si heterolayers | Maikap, S; Lee, JH; Kim, DY; Mahapatra, R; Ray, SK; Song, JH; No, YS; Choi, WK |
1998-05-18 | RBS/channeling studies on the heteroepitaxially grown Y2O3 film on Si(100) | Kim, HB; Cho, MH; Whangbo, SW; Whang, CN; Choi, SC; Choi, WK; Song, JH; Kim, SO |
1998-08-04 | Reactive ion (N-2(+)) beam pretreatment of sapphire for GaN growth | Byun, D; Jeong, J; Kim, HJ; Koh, SK; Choi, WK; Park, D; Kum, DW |
2001-11 | Reduction of defects in GaN on reactive ion beam treated sapphire by annealing | Byun, D; Jhin, J; Cho, S; Kim, J; Lee, SJ; Hong, CH; Kim, G; Choi, WK |
1999-07-05 | Relation between hydrophilicity and cell culturing on polystyrene petri dish modified by ion-assisted reaction | Choi, SC; Choi, WK; Jung, HJ; Park, JG; Chung, BC; Yoo, YS; Koh, SK |
1998-01 | Structure and gas-sensing characteristics of undoped tin oxide thin films fabricated by ion-assisted deposition | Song, SK; Cho, JS; Choi, WK; Jung, HJ; Choi, DS; Lee, JY; Baik, HK; Koh, SK |
1998-12 | Study of electron energy distribution functions (EEDFs) in three DC low-pressure plasma sources | Antonova, T; Bougrov, G; Bougrova, A; Choi, WK; Goncharov, L; Jung, HJ; Koh, SK; Kondranin, S; Kralkina, E; Sitin, E; Obukhov, V |
1996-07 | Surface chemical reaction between polycarbonate and kilo-electron-volt energy Ar+ ion in oxygen environment | Choi, WK; Koh, SK; Jung, HJ |
1998-11 | Surface modification of alpha-Al2O3(0001) by N-2(+) ion irradiation | Choi, WK; Choi, SC; Jung, HJ; Koh, SK; Byun, DJ; Kum, DW |
1997-06-06 | Surface modification of polytetrafluoroethylene by Ar+ irradiation for improved adhesion to other materials | Koh, SK; Park, SC; Kim, SR; Choi, WK; Jung, HJ; Pae, KD |
1999-04-04 | Surface reaction on polyvinylidenefluoride (PVDF) irradiated by low energy ion beam in reactive gas environment | Han, S; Choi, WK; Yoon, KH; Koh, SK |
1998-01 | Synthesis of SnO2-x thin films by oxygen-ion-assisted deposition for hydrocarbon gas detection | Choi, DS; Song, SK; Jeon, JS; Choi, WK; Koh, SK; Kim, KD; Jung, HJ; Baik, HK |
1997-07-30 | The characterization of undoped SnOx thin film grown by reactive ion-assisted deposition | Choi, WK; Cho, JS; Song, SK; Jung, HJ; Koh, SK; Yoon, KH; Lee, CM; Sung, MC; Jeong, K |