Showing results 6 to 8 of 8
Issue Date | Title | Author(s) |
---|---|---|
2010-11 | Modified Potential Well Formed by Si/SiO2/TiN/TiO2/SiO2/TaN for Flash Memory Application | Zhang, Gang; Ra, Chang Ho; Li, Hua-Min; Shen, Tian-zi; Cheong, Byung-ki; Yoo, Won Jong |
2012-10 | Modified write-and-verify scheme for improving the endurance of multi-level cell phase-change memory using Ge-doped SbTe | Zhang, Gang; Wu, Zhe; Jeong, Jeung-hyun; Jeong, Doo Seok; Yoo, Won Jong; Cheong, Byung-ki |
2011-03 | Multi-level cell storage with a modulated current method for phase-change memory using Ge-doped SbTe | Zhang, Gang; Wu, Zhe; Jeong, Jeung-Hyun; Jeong, Doo Seok; Yoo, Won Jong; Cheong, Byung-ki |