| 1998-01 | One-step selective growth of GaAs on V-groove patterned GaAs substrates using CBr4 and CCl4 | Kim, EK; Kim, TG; Son, CS; Kim, SI; Park, YK; Kim, Y; Min, SK; Choi, IH |
| 2004-10 | Optical properties of ZnO nanocrystals synthesized by using sol-gel method | Chang, HJ; Lu, CZ; Wang, YS; Son, CS; Kim, SI; Kim, YH; Choi, IH |
| 2002-06-24 | Orientation and partitioning behavior of dilute rodlike polyelectrolyte suspensions within confined slit microchannels | Chun, MS; Kim, SI; Park, OO |
| 2004-05 | Oxygen plasma rapid thermal annealing to improve the electrical properties of Pt-SrBi2Nb2O9-SiO2_Si gate structure | Kim, IS; Kim, SI; Kim, YT |
| 1996-08 | Properties of carbon-doped InGaAs grown by atmospheric pressure metalorganic chemical vapor deposition using CCl4 | Son, CS; Kim, SI; Kim, Y; Lee, MS; Kim, MS; Min, SK; Choi, IH |
| 2004-12 | Red emission from Eu-implanted GaN | Son, CS; Kim, SI; Kim, YH; Kim, YT; Choi, IH; Wakahara, A; Tanoue, H; Ogura, M |
| 1998-05 | Selective epitaxy of carbon-tetrachloride-doped GaAs grown by metalorganic chemical vapor deposition | Park, YK; Kim, SI; Kim, Y; Kim, EK; Min, SK; Son, CS; Choi, IH |
| 1996-03 | Strain and critical layer thickness analysis of carbon-doped GaAs | Kim, SI; Kim, MS; Min, SK |
| 1997-11-21 | Temperature-dependent Hall analysis of carbon-doped GaAs | Kim, SI; Son, CS; Chung, SW; Park, YK; Kim, EK; Min, SK |
| 2000-09 | Thermal stability of tungsten-boron-nitride thin film as diffusion barrier | Park, YK; Kim, SI; Kim, YT; Lee, CW |
